august 2003 2003 fairchild semiconductor corporation fdp6030l/ fdb6030l rev e(w) fdp6030l/fdb6030l n-channel logic level powertrench mosfet general description this n-channel logic level mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. these mosfets feature faster switching and lower gate charge than other mosfets with comparable r ds( on) specifications. the result is a mosfet that is easy and safer to drive (even at very high frequencies), and dc/dc power supply designs with higher overall efficiency. it has been optimized for low gate charge, low r ds( on) and fast switching speed. features 48 a, 30 v r ds(on) = 13 m w @ v gs = 10 v r ds(on) = 17 m w @ v gs = 4.5 v critical dc electrical parameters specified at elevated temperature high performance trench technology for extremely low r ds(on) 175 c maximum junction temperature rating s g d to-220 fdp series d g s to-263ab fdb series s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1) 48 a ? pulsed 150 p d total power dissipation @ t c = 25 c 52 w derate above 25 c 0.3 w/ c t j , t stg operating and storage junction temperature range ?65 to +175 c thermal characteristics r q jc thermal resistance, junction-to-case 2.9 c/w r q ja thermal resistance, junction-to-ambient 62.5 package marking and ordering information device marking device reel size tape width quantity fdb6030l fdb6030l 13?? 24mm 800 units fdp6030l fdp6030l tube n/a 45 fdp6030l/fdb6030l
fdp6030l/fdb6030l rev e(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 1) e as single pulse drain-source avalanche energy v dd = 15 v, i d = 26 a 100 mj i as maximum drain-source avalanche current 26 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 m a 30 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 23 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 m a i gss gate?body leakage v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = 250 m a 1 1.9 3 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c ?5 mv/ c r ds(on) static drain?source on? resistance v gs = 10 v, i d = 26 a v gs = 4.5 v, i d = 21 a v gs = 10 v, i d = 26 a, t j =125 c 7.9 10.2 13.0 13 17 20 m w i d(on) on?state drain current v gs = 10 v, v ds = 10 v 60 a g fs forward transconductance v ds = 10v, i d = 26 a 68 s dynamic characteristics c iss input capacitance 1250 pf c oss output capacitance 330 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 155 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 1.3 w switching characteristics (note 2) t d(on) turn?on delay time 11 20 ns t r turn?on rise time 12 22 ns t d(off) turn?off delay time 29 46 ns t f turn?off fall time v dd = 15v, i d = 1 a, v gs = 10 v, r gen = 6 w 12 21 ns q g total gate charge 13 18 nc q gs gate?source charge 3.9 nc q gd gate?drain charge v ds = 15 v, i d = 26 a, v gs = 5 v 5.2 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 48 a v sd drain?source diode forward voltage v gs = 0 v, i s = 26 a (note 1) 0.92 1.3 v t rr diode reverse recovery time 26 ns q rr diode reverse recovery charge i f = 26 a, d if / d t = 100 a/s 15 nc notes: 1. calculated continuous current based on maximum allowable junction temperature. 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fdp6030l/fdb6030l
fdp6030l/fdb6030l rev e(w) typical characteristics 0 30 60 90 120 150 180 0 1 2 3 4 5 v ds , drain-source voltage (v) i d , drain current (a) 3.0v v gs = 10v 4.5v 3.5v 6.0v 4.0v 5.0v 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.5v 3.5v 5.0v 6.0v 4.5v 4.0v 10v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 26a v gs =10v 0.005 0.010 0.015 0.020 0.025 0.030 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 26a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 15 30 45 60 75 90 1.5 2 2.5 3 3.5 4 4.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.001 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdp6030l/fdb6030l
fdp6030l/fdb6030l rev e(w) typical characteristics 0 2 4 6 8 10 0 5 10 15 20 25 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 26a v ds = 10v 20v 15v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 1 10 100 1000 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 100s 100ms r ds(on) limit v gs = 10v single pulse r q jc = 2.9 o c/w t a = 25 o c 10ms 10s 1ms 0 1000 2000 3000 4000 5000 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q jc = 2.9c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q jc (t) = r(t) * r q jc r q jc = 2.9 c/w t j - t a = p * r q jc (t) duty cycle, d = t 1 / t 2 p(pk t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. fdp6030l/fdb6030l
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